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    Silicon carbide substrate (powder ) sintering furnace
    Silicon carbide substrate or powder sintering furnace
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    details

    Use

    The furnace mainly used for sintering silicon carbide substrate or powder.

    Main configuration:

    1.Horizontal structure with built-in water cooling jacket. .

    2. Graphite rod as heating element, electric resistance heating.

    3 . Heating element along inner shell of furnace helps improving temperature uniformity.

    4. Sintering done under the vacuum conduces to enhancing the thermo-stability 

        and shock resistance of the sintered product.   

    5. Automatic control mode of PLC plus touching screen.

    Main technical parameters:

    No.

    Model

    Max. temperature

    Working zone

    Vacuum

    Atmosphere

    （WXHXD）mm

    1

    ZS-90-20

    2400℃

    400X400X1200

    1Pa

    Arg. Or N2

    2

    ZS-300-20

    2400℃

    500X500X1500

    1Pa

    Arg. Or N2

    3

    ZS-400-20

    2400℃

    600X600X1800

    1Pa

    Arg. Or N2

     Furnace can be customized on your request. 

     


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